On-Surface Atomic Wires and Logic Gates

On-Surface Atomic Wires and Logic Gates

Updated in 2016 Proceedings of the International Workshop on Atomic Wires, Krakow, September 2014

Kolmer, Marek; Joachim, Christian

Springer International Publishing AG

07/2018

193

Mole

Inglês

9783319847573

15 a 20 dias

3226

Descrição não disponível.
Surface Hydrogenation of the Si(100)-2x1 and electronic properties of silicon dangling bonds on the Si(100):H surfaces.- Nanopackaging of Si(100)H wafer for atomic scale investigations.- Atomic wires on Ge(001):H surface.- Si(100):H and Ge(100):H Dimer Rows Contrast Inversion in Low-Temperature Scanning Tunnelling Microscope Images.- Band engineering of dangling-bond wires on the Si (100)H surface.- Band Engineering of the Si(001):H Surface by Doping with P and B Atoms.- Electronic Properties of a Single Dangling Bond and of Dangling Bond Wires on a Si(001)H Surface.- Quantum Hamiltonian Computing (QHC) Logic Gates.- The Design of a surface atomic scale logic gate with molecular latch inputs.- Molecule Latches in atomic scale surface logic gates constructed on the Si(100)H surface.- Complex atomic scale surface electronic circuit's simulator including the pads and the supporting surface.
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Atomic scale conducting wire;Atomic scale logic gate;Atomic scale nanowires;Atomic scale circuits;Si(100)H surface preparation;Molecular latch;Quantum Hamiltonian Computing;Nanopackaging;Dangling bond;Single molecule electronics;Silicon nanowire electrodes;Atomic scale electronics;Nanoelectronics