Physics of Semiconductor Devices
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portes grátis
Physics of Semiconductor Devices
Proceedings of IWPSD 2017
Sharma, R. K.; Rawal, D.S.
Springer International Publishing AG
02/2019
1299
Dura
Inglês
9783319976037
15 a 20 dias
2445
Descrição não disponível.
Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot aEUR" Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
III-Nitrides materials and devices;Compound semiconductors;VLSI technology;Crystal growth, epitaxy and characterization;Semiconductors for quantum computing;Graphene and 2D materials;IWPSD 2017
Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot aEUR" Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
